Samsung 970 EVO Plus 2TB MZ-V7S2T0BW

Disco Solido SSD, M.2 2280, PCIe 3.0 x4 NVMe, 2TB, controladora Samsung memoria flash V5. Canon LPI: 6,59 €.

Sin Stock OutOfStock

206.00 € (170.25+IVA)

MPN: MZ-V7S2T0BW

EAN/GTIN-13: 8801643628093

Fabricante: Samsung

Garantía: 5 años

Pulsa para detalles en la web de Samsung

Always Evolving SSD

The ultimate in performance, upgraded. Faster than the 970 EVO, the 970 EVO Plus is powered by the latest V-NAND technology and firmware optimization. It maximizes the potential of NVMe bandwidth for unbeatable computing. In capacities up to 2TB, with reliability of up to 1,200 TBW.

Level up Performance

The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost.

Design Flexibility

The next advancement in NVMe SSD. The 970 EVO Plus fits up to 2TB onto the compact M.2 (2280) form factor, greatly expanding storage capacity and saving space for other components. Samsung's innovative technology empowers you with the capacity to do more and accomplish more.

Exceptional Endurance

The new standard in sustainable performance. Get up to 1,200 TBW with a 5-year limited warranty for lasting performance. The 970 EVO Plus provides exceptional endurance powered by the latest V-NAND technology and Samsung’s quality.

Unparalleled Reliability

Achieve a new level of drive confidence. Samsung’s advanced nickel-coated controller and heat spreader on the 970 EVO Plus enable superior heat dissipation. The Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimize performance drops.

Model Code (Capacity)¹⁾

MZ-V7S250BW (250 GB)
MZ-V7S500BW (500 GB)
MZ-V7S1T0BW (1,000 GB)

General Feature

Application

Client PCs
FORM FACTOR

M.2 (2280)
INTERFACE

PCIe Gen 3.0 x4, NVMe 1.3
DIMENSION (WxHxD)

Max. 80.15 x 22.15 x 2.38 (mm)
WEIGHT

Max 8.0g
STORAGE MEMORY

Samsung V-NAND 3-bit MLC

Special Feature

TRIM Support

Yes
S.M.A.R.T Support

Yes
GC (GARBAGE COLLECTION)

Auto Garbage Collection Algorithm
ENCRYPTION SUPPORT

AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)
WWN SUPPORT

Not Supported
DEVICE SLEEP MODE SUPPORT

Yes

Performance²⁾

SEQUENTIAL READ

Up to 3,500 MB/s
SEQUENTIAL WRITE

250 GB: Up to 2,300 MB/s
500 GB: Up to 3,200 MB/s
1,000 GB: Up to 3,300 MB/s
RANDOM READ (4KB, QD32)

250 GB: Up to 250,000 IOPS
500 GB: Up to 480,000 IOPS
1,000 GB: Up to 600,000 IOPS
RANDOM WRITE (4KB, QD32)

Up to 550,000 IOPS
RANDOM READ (4KB, QD1)

250 GB: Up to 17,000 IOPS
500 GB, 1,000 GB: Up to 19,000 IOPS
RANDOM WRITE (4KB, QD1)

Up to 60,000 IOPS

Environment

AVERAGE POWER CONSUMPTION
(System Level)³⁾

250 GB: Average 5.0 W Maximum 8.0 W
500 GB: Average 5.8 W Maximum 9.0 W
1,000 GB: Average 6.0 W Maximum 9.0 W
(Burst mode)
POWER CONSUMPTION (IDLE)³⁾

Max. 30mW
POWER CONSUMPTION (Device Sleep)

Max. 5mW
ALLOWABLE VOLTAGE

3.3 V ± 5 % Allowable voltage
RELIABILITY (MTBF)

1.5 Million Hours Reliability
OPERATING TEMPERATURE

0 - 70 ℃
Shock

1,500 G & 0.5 ms (Half sine)